SI4963BDY-T1-GE3
MOSFET 2P-CH 20V 4.9A 8SOIC
SI4963BDY-T1-GE3 Specifications
Mounting Type：
Surface Mount
Supplier Device Package：
8-SOIC
Package / Case：
8-SOIC (0.154", 3.90mm Width)
Technology：
MOSFET (Metal Oxide)
FET Feature：
Logic Level Gate
Operating Temperature：
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)：
20V
Configuration：
2 P-Channel (Dual)
Power - Max：
1.1W
Vgs(th) (Max) @ Id：
1.4V @ 250µA
Current - Continuous Drain (Id) @ 25°C：
4.9A
Gate Charge (Qg) (Max) @ Vgs：
21nC @ 4.5V
Rds On (Max) @ Id, Vgs：
32mOhm @ 6.5A, 4.5V
