EPC2108
GANFET 3 N-CH 60V/100V 9BGA
EPC2108 Specifications
Mounting Type：
Surface Mount
Operating Temperature：
-40°C ~ 150°C (TJ)
Technology：
GaNFET (Gallium Nitride)
Package / Case：
9-VFBGA
Configuration：
3 N-Channel (Half Bridge + Synchronous Bootstrap)
Current - Continuous Drain (Id) @ 25°C：
1.7A, 500mA
Vgs(th) (Max) @ Id：
2.5V @ 100µA, 2.5V @ 20µA
Supplier Device Package：
9-BGA (1.35x1.35)
Drain to Source Voltage (Vdss)：
60V, 100V
Rds On (Max) @ Id, Vgs：
190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
Gate Charge (Qg) (Max) @ Vgs：
0.22nC @ 5V, 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds：
22pF @ 30V, 7pF @ 30V
