EPC2107
GANFET 3 N-CH 100V 9BGA
EPC2107 Specifications
Mounting Type：
Surface Mount
Operating Temperature：
-40°C ~ 150°C (TJ)
Technology：
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：
100V
Package / Case：
9-VFBGA
Configuration：
3 N-Channel (Half Bridge + Synchronous Bootstrap)
Current - Continuous Drain (Id) @ 25°C：
1.7A, 500mA
Rds On (Max) @ Id, Vgs：
320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V
Vgs(th) (Max) @ Id：
2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs：
0.16nC @ 5V, 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds：
16pF @ 50V, 7pF @ 50V
Supplier Device Package：
9-BGA (1.35x1.35)
