SQJ968EP-T1_GE3
MOSFET 2N-CH 60V 23.5A PPAK SO8
SQJ968EP-T1_GE3 Specifications
Mounting Type：
Surface Mount
Grade：
Automotive
Technology：
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id：
2.5V @ 250µA
Qualification：
AEC-Q101
Configuration：
2 N-Channel (Dual)
Drain to Source Voltage (Vdss)：
60V
Package / Case：
PowerPAK® SO-8 Dual
Supplier Device Package：
PowerPAK® SO-8 Dual
Operating Temperature：
-55°C ~ 175°C (TA)
Current - Continuous Drain (Id) @ 25°C：
23.5A (Tc)
Rds On (Max) @ Id, Vgs：
33.6mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs：
18.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：
714pF @ 30V
Power - Max：
42W (Tc)
