SI4908DY-T1-GE3
MOSFET 2N-CH 40V 5A 8SOIC
SI4908DY-T1-GE3 Specifications
Mounting Type：
Surface Mount
Supplier Device Package：
8-SOIC
Package / Case：
8-SOIC (0.154", 3.90mm Width)
Technology：
MOSFET (Metal Oxide)
Operating Temperature：
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id：
2.2V @ 250µA
Configuration：
2 N-Channel (Dual)
Drain to Source Voltage (Vdss)：
40V
Current - Continuous Drain (Id) @ 25°C：
5A
Gate Charge (Qg) (Max) @ Vgs：
12nC @ 10V
Power - Max：
2.75W
Rds On (Max) @ Id, Vgs：
60mOhm @ 4.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
355pF @ 20V
