SI4834CDY-T1-E3
MOSFET 2N-CH 30V 8A 8SOIC
SI4834CDY-T1-E3 Specifications
Mounting Type：
Surface Mount
Supplier Device Package：
8-SOIC
Package / Case：
8-SOIC (0.154", 3.90mm Width)
Technology：
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：
30V
Operating Temperature：
-55°C ~ 150°C (TJ)
Configuration：
2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C：
8A
Rds On (Max) @ Id, Vgs：
20mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：
25nC @ 10V
Power - Max：
2.9W
Input Capacitance (Ciss) (Max) @ Vds：
950pF @ 15V
