SI4569DY-T1-GE3
MOSFET N/P-CH 40V 7.6A 8SOIC
SI4569DY-T1-GE3 Specifications
Mounting Type：
Surface Mount
Supplier Device Package：
8-SOIC
Package / Case：
8-SOIC (0.154", 3.90mm Width)
Technology：
MOSFET (Metal Oxide)
Configuration：
N and P-Channel
Operating Temperature：
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id：
2V @ 250µA
Drain to Source Voltage (Vdss)：
40V
Gate Charge (Qg) (Max) @ Vgs：
32nC @ 10V
Current - Continuous Drain (Id) @ 25°C：
7.6A, 7.9A
Rds On (Max) @ Id, Vgs：
27mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
855pF @ 20V
Power - Max：
3.1W, 3.2W
