SIZF906DT-T1-GE3
MOSFET 2N-CH 30V 60A 8POWERPAIR
SIZF906DT-T1-GE3 Specifications
Mounting Type：
Surface Mount
Operating Temperature：
-55°C ~ 150°C (TA)
Technology：
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：
30V
Vgs(th) (Max) @ Id：
2.2V @ 250µA
Package / Case：
8-PowerWDFN
Configuration：
2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C：
60A (Tc)
Supplier Device Package：
8-PowerPair® (6x5)
Rds On (Max) @ Id, Vgs：
3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs：
22nC @ 4.5V, 92nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：
2000pF @ 15V, 8200pF @ 15V
Power - Max：
38W (Tc), 83W (Tc)
