SIZ910DT-T1-GE3
MOSFET 2N-CH 30V 40A 8POWERPAIR
SIZ910DT-T1-GE3 Specifications
Mounting Type：
Surface Mount
Technology：
MOSFET (Metal Oxide)
FET Feature：
Logic Level Gate
Drain to Source Voltage (Vdss)：
30V
Operating Temperature：
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id：
2.2V @ 250µA
Package / Case：
8-PowerWDFN
Configuration：
2 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds：
1500pF @ 15V
Gate Charge (Qg) (Max) @ Vgs：
40nC @ 10V
Current - Continuous Drain (Id) @ 25°C：
40A
Rds On (Max) @ Id, Vgs：
5.8mOhm @ 20A, 10V
Supplier Device Package：
8-PowerPair® (6x5)
Power - Max：
48W, 100W
