SI6975DQ-T1-E3
MOSFET 2P-CH 12V 4.3A 8TSSOP
SI6975DQ-T1-E3 Specifications
Mounting Type：
Surface Mount
Package / Case：
8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package：
8-TSSOP
Technology：
MOSFET (Metal Oxide)
FET Feature：
Logic Level Gate
Operating Temperature：
-55°C ~ 150°C (TJ)
Configuration：
2 P-Channel (Dual)
Drain to Source Voltage (Vdss)：
12V
Power - Max：
830mW
Gate Charge (Qg) (Max) @ Vgs：
30nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C：
4.3A
Rds On (Max) @ Id, Vgs：
27mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id：
450mV @ 5mA (Min)
