SI4933DY-T1-GE3
MOSFET 2P-CH 12V 7.4A 8SOIC
SI4933DY-T1-GE3 Specifications
Mounting Type：
Surface Mount
Supplier Device Package：
8-SOIC
Package / Case：
8-SOIC (0.154", 3.90mm Width)
Technology：
MOSFET (Metal Oxide)
FET Feature：
Logic Level Gate
Operating Temperature：
-55°C ~ 150°C (TJ)
Configuration：
2 P-Channel (Dual)
Power - Max：
1.1W
Drain to Source Voltage (Vdss)：
12V
Current - Continuous Drain (Id) @ 25°C：
7.4A
Rds On (Max) @ Id, Vgs：
14mOhm @ 9.8A, 4.5V
Vgs(th) (Max) @ Id：
1V @ 500µA
Gate Charge (Qg) (Max) @ Vgs：
70nC @ 4.5V
