Electronic Components Distribution
TK32E12N1,S1X
MOSFET N CH 120V 60A TO-220
part Number：
TK32E12N1,S1X
Alternative Model：
TK22E10N1 , S1X
manufacturer：
Toshiba Electronic Devices and Storage Corporation
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N CH 120V 60A TO-220
RoHS：
YES
TK32E12N1,S1X specifications
Mounting Type：
Through Hole
Operating Temperature：
150°C (TJ)
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Package / Case：
TO-220-3
Gate Charge (Qg) (Max) @ Vgs：
34 nC @ 10 V
Supplier Device Package：
TO-220
Vgs(th) (Max) @ Id：
4V @ 500µA
Drain to Source Voltage (Vdss)：
120 V
Current - Continuous Drain (Id) @ 25°C：
60A (Tc)
Power Dissipation (Max)：
98W (Tc)
Rds On (Max) @ Id, Vgs：
13.8mOhm @ 16A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
2000 pF @ 60 V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：1723
quantity
unit price
International prices
1
1.57
1.57
50
1.27
63.5
100
1
100
500
0.85
425
1000
0.69
690
2000
0.65
1300
5000
0.62
3100
10000
0.61
6100
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