Electronic Components Distribution
TK31J60W,S1VQ
MOSFET N-CH 600V 30.8A TO3P
part Number：
TK31J60W,S1VQ
Alternative Model：
TK31J60W5 , S1VQ , IXFK64N50Q3 , IXFK78N50P3 , AQV414AX
manufacturer：
Toshiba Electronic Devices and Storage Corporation
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 600V 30.8A TO3P
RoHS：
YES
TK31J60W,S1VQ specifications
Mounting Type：
Through Hole
Operating Temperature：
150°C (TJ)
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
10V
Vgs (Max)：
±30V
Package / Case：
TO-3P-3, SC-65-3
Drain to Source Voltage (Vdss)：
600 V
Gate Charge (Qg) (Max) @ Vgs：
86 nC @ 10 V
Power Dissipation (Max)：
230W (Tc)
Supplier Device Package：
TO-3P(N)
Input Capacitance (Ciss) (Max) @ Vds：
3000 pF @ 300 V
Current - Continuous Drain (Id) @ 25°C：
30.8A (Ta)
Rds On (Max) @ Id, Vgs：
88mOhm @ 15.4A, 10V
Vgs(th) (Max) @ Id：
3.7V @ 1.5mA
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：1600
quantity
unit price
International prices
1
9.83
9.83
25
7.84
196
100
7.02
702
500
6.19
3095
1000
5.58
5580
2000
5.23
10460
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