SIR640DP-T1-GE3
MOSFET N-CH 40V 60A PPAK SO-8
part Number:
SIR640DP-T1-GE3
Alternative Model:
SIR640ADP-T1-GE3
manufacturer:
Vishay / Siliconix
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET N-CH 40V 60A PPAK SO-8
RoHS:
YES
SIR640DP-T1-GE3 specifications
Mounting Type:
Surface Mount
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Vgs (Max):
±20V
Operating Temperature:
-55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Supplier Device Package:
PowerPAK® SO-8
Package / Case:
PowerPAK® SO-8
Power Dissipation (Max):
6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id:
2.3V @ 250µA
Rds On (Max) @ Id, Vgs:
1.7mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs:
113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds:
4930 pF @ 20 V
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Manufacturer's standard delivery time:be pending
Standard Pack Quantity:1600
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