Electronic Components Distribution
IPB026N06NATMA1
MOSFET N-CH 60V 25A/100A D2PAK
part Number：
IPB026N06NATMA1
Alternative Model：
IPB029N06N3GATMA1 , PSMN4R6-60BS , 118 , IPB037N06N3GATMA1 , IRS10752LTRPBF , 1EDI60N12AFXUMA1 , 1ED44173N01BXTSA1 , IRS2011STRPBF , IRS21271STRPBF , IRS4427STRPBF , 2ED2184S06FXUMA1 , 2ED24427N01FXUMA1 , 2EDL23N06PJXUMA1 , 2ED2110S06MXUMA1
manufacturer：
IR (Infineon Technologies)
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 60V 25A/100A D2PAK
RoHS：
YES
IPB026N06NATMA1 specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
6V, 10V
Drain to Source Voltage (Vdss)：
60 V
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 175°C (TJ)
Package / Case：
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs：
56 nC @ 10 V
Supplier Device Package：
PG-TO263-3
Power Dissipation (Max)：
3W (Ta), 136W (Tc)
Current - Continuous Drain (Id) @ 25°C：
25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs：
2.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id：
2.8V @ 75µA
Input Capacitance (Ciss) (Max) @ Vds：
4100 pF @ 30 V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：4533
quantity
unit price
International prices
1000
1.24
1240
2000
1.18
2360
5000
1.13
5650
10000
1.1
11000
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