Electronic Components Distribution
IPB014N06NATMA1
MOSFET N-CH 60V 34A/180A TO263-7
part Number：
IPB014N06NATMA1
Alternative Model：
TK100L60W , VQ , NCP18XH103J03RB , IRFS7530TRL7PP , IPB017N06N3GATMA1 , IPB010N06NATMA1 , NTBGS001N06C , PS2911-1-AX , ASSR-4110-003E , LDFM33PUR , B65611D0000R048 , BZW50-39 , IRF60SC241ARMA1 , ACPL-C79B-000E , IPB016N06L3GATMA1 , FDS86240 , IRS10752LTRPBF , 1EDI60N12AFXUMA1 , 1ED44173N01BXTSA1 , IRS21271STRPBF , IRS4427STRPBF , 2ED2184S06FXUMA1 , 2ED24427N01FXUMA1 , 2EDL23N06PJXUMA1 , 2ED2110S06MXUMA1
manufacturer：
IR (Infineon Technologies)
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 60V 34A/180A TO263-7
RoHS：
YES
IPB014N06NATMA1 specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
6V, 10V
Drain to Source Voltage (Vdss)：
60 V
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 175°C (TJ)
Package / Case：
TO-263-7, D2PAK (6 Leads + Tab)
Power Dissipation (Max)：
3W (Ta), 214W (Tc)
Gate Charge (Qg) (Max) @ Vgs：
106 nC @ 10 V
Supplier Device Package：
PG-TO263-7
Rds On (Max) @ Id, Vgs：
1.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C：
34A (Ta), 180A (Tc)
Vgs(th) (Max) @ Id：
2.8V @ 143µA
Input Capacitance (Ciss) (Max) @ Vds：
7800 pF @ 30 V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：3484
quantity
unit price
International prices
1000
2.52
2520
2000
2.38
4760
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