IPD50R280CEBTMA1
MOSFET N-CH 500V 13A TO252-3
part Number:
IPD50R280CEBTMA1
Alternative Model:
IPD50R280CEAUMA1
manufacturer:
IR (Infineon Technologies)
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET N-CH 500V 13A TO252-3
RoHS:
YES
IPD50R280CEBTMA1 specifications
Mounting Type:
Surface Mount
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Vgs (Max):
±20V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25°C:
13A (Tc)
Drain to Source Voltage (Vdss):
500 V
Supplier Device Package:
PG-TO252-3-11
Power Dissipation (Max):
92W (Tc)
Drive Voltage (Max Rds On, Min Rds On):
13V
Rds On (Max) @ Id, Vgs:
280mOhm @ 4.2A, 13V
Vgs(th) (Max) @ Id:
3.5V @ 350µA
Gate Charge (Qg) (Max) @ Vgs:
32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds:
773 pF @ 100 V
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Standard Pack Quantity:1600
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