SI2333DDS-T1-GE3
MOSFET P-CH 12V 6A SOT23-3
part Number:
SI2333DDS-T1-GE3
Alternative Model:
SI2333DDS-T1-BE3  ,  AP3012KTR-G1  ,  STP20NF20  ,  SI2333DS-T1-E3  ,  MBR0540T1G  ,  FDA217STR  ,  FDV301N  ,  TPD4E02B04DQAR  ,  SI2333DS-T1-GE3  ,  DXT5551P5-13  ,  SI2333-TP  ,  IRLML6401TRPBF  ,  DMP1045U-7  ,  SISS23DN-T1-GE3  ,  SDM03U40Q-7
manufacturer:
Vishay / Siliconix
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET P-CH 12V 6A SOT23-3
RoHS:
YES
SI2333DDS-T1-GE3 specifications
Mounting Type:
Surface Mount
Technology:
MOSFET (Metal Oxide)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Package / Case:
TO-236-3, SC-59, SOT-23-3
Drain to Source Voltage (Vdss):
12 V
Vgs (Max):
±8V
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Supplier Device Package:
SOT-23-3 (TO-236)
Current - Continuous Drain (Id) @ 25°C:
6A (Tc)
Rds On (Max) @ Id, Vgs:
28mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
35 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds:
1275 pF @ 6 V
Power Dissipation (Max):
1.2W (Ta), 1.7W (Tc)
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:29806
quantity
unit price
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1170
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3900
75000
0.12
9000
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