Electronic Components Distribution
BUK9E4R9-60E,127
MOSFET N-CH 60V 100A I2PAK
part Number：
BUK9E4R9-60E,127
manufacturer：
NXP Semiconductors
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 60V 100A I2PAK
RoHS：
YES
BUK9E4R9-60E,127 specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：
60 V
Vgs(th) (Max) @ Id：
2.1V @ 1mA
Current - Continuous Drain (Id) @ 25°C：
100A (Tc)
Vgs (Max)：
±10V
Operating Temperature：
-55°C ~ 175°C (TJ)
Package / Case：
TO-262-3 Long Leads, I2PAK, TO-262AA
Drive Voltage (Max Rds On, Min Rds On)：
5V, 10V
Supplier Device Package：
I2PAK
Gate Charge (Qg) (Max) @ Vgs：
65 nC @ 5 V
Power Dissipation (Max)：
234W (Tc)
Rds On (Max) @ Id, Vgs：
4.5mOhm @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
9710 pF @ 25 V
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