STB2N62K3
MOSFET N-CH 620V 2.2A TO263
STB2N62K3 Specifications
Mounting Type：
Surface Mount
Operating Temperature：
150°C (TJ)
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
10V
Vgs (Max)：
±30V
Supplier Device Package：
TO-263 (D2PAK)
Package / Case：
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id：
4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs：
15 nC @ 10 V
Power Dissipation (Max)：
45W (Tc)
Drain to Source Voltage (Vdss)：
620 V
Current - Continuous Drain (Id) @ 25°C：
2.2A (Tc)
Rds On (Max) @ Id, Vgs：
3.6Ohm @ 1.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
340 pF @ 50 V
