Electronic Components Distribution
SIS468DN-T1-GE3
MOSFET N-CH 80V 30A PPAK1212-8
part Number：
SIS468DN-T1-GE3
Alternative Model：
RQ3L050GNTB , SIS443DN-T1-GE3 , RQ7E110AJTCR , MAX17506ATP+ , SIS890DN-T1-GE3 , SIR870ADP-T1-GE3 , MAX17506ATP+T , SDT5H100LP5-7 , LTST-C150KDKT-10A , FDMC86324 , SIS434DN-T1-GE3 , NC7WZ17P6X , TL431BQDBZR
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 80V 30A PPAK1212-8
RoHS：
YES
SIS468DN-T1-GE3 specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id：
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：
28 nC @ 10 V
Supplier Device Package：
PowerPAK® 1212-8
Package / Case：
PowerPAK® 1212-8
Drain to Source Voltage (Vdss)：
80 V
Current - Continuous Drain (Id) @ 25°C：
30A (Tc)
Rds On (Max) @ Id, Vgs：
19.5mOhm @ 10A, 10V
Power Dissipation (Max)：
3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds：
780 pF @ 40 V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：1600
quantity
unit price
International prices
3000
0.57
1710
6000
0.55
3300
9000
0.53
4770
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