Electronic Components Distribution
SIJ482DP-T1-GE3
MOSFET N-CH 80V 60A PPAK SO-8
part Number：
SIJ482DP-T1-GE3
Alternative Model：
SQJA80EP-T1_GE3 , SIDR870ADP-T1-GE3 , SQJA82EP-T1_GE3 , SQJ186EP-T1_GE3 , SIJ478DP-T1-GE3 , FDMS86102LZ , 1722861303 , LTC4364IDE-2#PBF
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 80V 60A PPAK SO-8
RoHS：
YES
SIJ482DP-T1-GE3 specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)：
80 V
Current - Continuous Drain (Id) @ 25°C：
60A (Tc)
Supplier Device Package：
PowerPAK® SO-8
Package / Case：
PowerPAK® SO-8
Vgs(th) (Max) @ Id：
2.7V @ 250µA
Rds On (Max) @ Id, Vgs：
6.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs：
71 nC @ 10 V
Power Dissipation (Max)：
5W (Ta), 69.4W (Tc)
Input Capacitance (Ciss) (Max) @ Vds：
2425 pF @ 40 V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：1600
quantity
unit price
International prices
3000
0.86
2580
6000
0.83
4980
9000
0.8
7200
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