AOI4N60
MOSFET N-CH 600V 4A TO251A
AOI4N60 Specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
10V
Vgs (Max)：
±30V
Operating Temperature：
-50°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id：
4.5V @ 250µA
Drain to Source Voltage (Vdss)：
600 V
Power Dissipation (Max)：
104W (Tc)
Current - Continuous Drain (Id) @ 25°C：
4A (Tc)
Supplier Device Package：
TO-251A
Package / Case：
TO-251-3 Stub Leads, IPAK
Input Capacitance (Ciss) (Max) @ Vds：
640 pF @ 25 V
Rds On (Max) @ Id, Vgs：
2.3Ohm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs：
14.5 nC @ 10 V
