IXTY01N100
MOSFET N-CH 1000V 100MA TO252AA
IXTY01N100 Specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)：
1000 V
Package / Case：
TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package：
TO-252AA
Power Dissipation (Max)：
25W (Tc)
Vgs(th) (Max) @ Id：
4.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs：
6.9 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C：
100mA (Tc)
Rds On (Max) @ Id, Vgs：
80Ohm @ 100mA, 10V
Input Capacitance (Ciss) (Max) @ Vds：
54 pF @ 25 V
