IPD068P03L3GBTMA1
MOSFET P-CH 30V 70A TO252-3
IPD068P03L3GBTMA1 Specifications
Mounting Type：
Surface Mount
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 175°C (TJ)
FET Type：
P-Channel
Drain to Source Voltage (Vdss)：
30 V
Package / Case：
TO-252-3, DPAK (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs：
91 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C：
70A (Tc)
Power Dissipation (Max)：
100W (Tc)
Supplier Device Package：
PG-TO252-3
Vgs(th) (Max) @ Id：
2V @ 150µA
Rds On (Max) @ Id, Vgs：
6.8mOhm @ 70A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
7720 pF @ 15 V
