IPB80N04S4L04ATMA1
MOSFET N-CH 40V 80A TO263-3
IPB80N04S4L04ATMA1 Specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：
40 V
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Operating Temperature：
-55°C ~ 175°C (TJ)
Package / Case：
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Power Dissipation (Max)：
71W (Tc)
Current - Continuous Drain (Id) @ 25°C：
80A (Tc)
Supplier Device Package：
PG-TO263-3-2
Vgs (Max)：
+20V, -16V
Gate Charge (Qg) (Max) @ Vgs：
60 nC @ 10 V
Rds On (Max) @ Id, Vgs：
4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id：
2.2V @ 35µA
Input Capacitance (Ciss) (Max) @ Vds：
4690 pF @ 25 V
