Electronic Components Distribution
BSZ065N03LSATMA1
MOSFET N-CH 30V 12A/40A TSDSON
part Number：
BSZ065N03LSATMA1
Alternative Model：
IRS10752LTRPBF , 1ED44173N01BXTSA1 , 6EDL04N02PRXUMA1 , IRS21271STRPBF , IRS4427STRPBF , IRS2007STRPBF , 2ED2101S06FXUMA1 , 2ED2106S06FXUMA1 , PTN3363BSMP , TL074CDT , OPA856IDSGR , TPS54821RHLR , TPS7A20185PDQNR , SSM3K37MFV , L3F , BSZ019N03LSATMA1 , BSZ075N08NS5ATMA1 , ECS-250-20-33-DU-TR , TPS51285ARUKT , TPS61040DRVR , TPS51206DSQR , BAT6402VH6327XTSA1 , 2N7002KW , 74LVC8T245BQ , 118
manufacturer：
IR (Infineon Technologies)
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 30V 12A/40A TSDSON
RoHS：
YES
BSZ065N03LSATMA1 specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)：
30 V
Vgs(th) (Max) @ Id：
2V @ 250µA
Package / Case：
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs：
10 nC @ 10 V
Supplier Device Package：
PG-TSDSON-8-FL
Rds On (Max) @ Id, Vgs：
6.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C：
12A (Ta), 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds：
670 pF @ 15 V
Power Dissipation (Max)：
2.1W (Ta), 26W (Tc)
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：22386
quantity
unit price
International prices
5000
0.36
1800
10000
0.34
3400
25000
0.33
8250
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