TK2A65D(STA4,Q,M)
MOSFET N-CH 650V 2A TO220SIS
TK2A65D(STA4,Q,M) Specifications
Mounting Type：
Through Hole
Operating Temperature：
150°C (TJ)
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
10V
Vgs (Max)：
±30V
Drain to Source Voltage (Vdss)：
650 V
Package / Case：
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs：
9 nC @ 10 V
Power Dissipation (Max)：
30W (Tc)
Supplier Device Package：
TO-220SIS
Current - Continuous Drain (Id) @ 25°C：
2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds：
380 pF @ 25 V
Vgs(th) (Max) @ Id：
4.4V @ 1mA
Rds On (Max) @ Id, Vgs：
3.26Ohm @ 1A, 10V
