TK10A55D(STA4,Q,M)
MOSFET N-CH 550V 10A TO220SIS
TK10A55D(STA4,Q,M) Specifications
Mounting Type：
Through Hole
Operating Temperature：
150°C (TJ)
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
10V
Vgs (Max)：
±30V
Gate Charge (Qg) (Max) @ Vgs：
24 nC @ 10 V
Package / Case：
TO-220-3 Full Pack
Input Capacitance (Ciss) (Max) @ Vds：
1200 pF @ 25 V
Vgs(th) (Max) @ Id：
4V @ 1mA
Supplier Device Package：
TO-220SIS
Current - Continuous Drain (Id) @ 25°C：
10A (Ta)
Power Dissipation (Max)：
45W (Tc)
Drain to Source Voltage (Vdss)：
550 V
Rds On (Max) @ Id, Vgs：
720mOhm @ 5A, 10V
