NP36P04SDG-E1-AY
MOSFET P-CH 40V 36A TO252
NP36P04SDG-E1-AY Specifications
Mounting Type：
Surface Mount
Technology：
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：
40 V
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Vgs(th) (Max) @ Id：
2.5V @ 250µA
FET Type：
P-Channel
Package / Case：
TO-252-3, DPAK (2 Leads + Tab), SC-63
Operating Temperature：
175°C (TJ)
Current - Continuous Drain (Id) @ 25°C：
36A (Tc)
Gate Charge (Qg) (Max) @ Vgs：
55 nC @ 10 V
Supplier Device Package：
TO-252 (MP-3ZK)
Input Capacitance (Ciss) (Max) @ Vds：
2800 pF @ 10 V
Power Dissipation (Max)：
1.2W (Ta), 56W (Tc)
Rds On (Max) @ Id, Vgs：
17mOhm @ 18A, 10V
