Electronic Components Distribution
MUN5312DW1T2G
TRANS NPN/PNP PREBIAS SOT363
part Number：
MUN5312DW1T2G
Alternative Model：
MUN5312DW1T1G
manufacturer：
Sanyo Semiconductor/onsemi
category：
Discrete Semiconductor Products >
Transistors >
Bipolar (BJT) >
Bipolar Transistor Arrays, Pre-Biased >
describe：
TRANS NPN/PNP PREBIAS SOT363
RoHS：
YES
MUN5312DW1T2G specifications
Mounting Type：
Surface Mount
Package / Case：
6-TSSOP, SC-88, SOT-363
Current - Collector Cutoff (Max)：
500nA
Voltage - Collector Emitter Breakdown (Max)：
50V
Vce Saturation (Max) @ Ib, Ic：
250mV @ 300µA, 10mA
Transistor Type：
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)：
100mA
Supplier Device Package：
SC-88/SC70-6/SOT-363
Resistor - Base (R1)：
22kOhms
Resistor - Emitter Base (R2)：
22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce：
60 @ 5mA, 10V
Power - Max：
385mW
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：10580
quantity
unit price
International prices
3000
0.06
180
6000
0.06
360
9000
0.04
360
30000
0.04
1200
75000
0.04
3000
150000
0.03
4500
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