SI9410BDY-T1-E3
MOSFET N-CH 30V 6.2A 8SO
part Number:
SI9410BDY-T1-E3
Alternative Model:
SI4178DY-T1-GE3  ,  MBRS540T3G  ,  TFP410PAP
manufacturer:
Vishay / Siliconix
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET N-CH 30V 6.2A 8SO
RoHS:
YES
SI9410BDY-T1-E3 specifications
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC
Package / Case:
8-SOIC (0.154", 3.90mm Width)
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Vgs (Max):
±20V
Operating Temperature:
-55°C ~ 150°C (TJ)
Power Dissipation (Max):
1.5W (Ta)
Drain to Source Voltage (Vdss):
30 V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
23 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C:
6.2A (Ta)
Rds On (Max) @ Id, Vgs:
24mOhm @ 8.1A, 10V
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Standard Pack Quantity:1600
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