SUP60N06-12P-GE3
MOSFET N-CH 60V 60A TO220AB
SUP60N06-12P-GE3 Specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：
60 V
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Supplier Device Package：
TO-220AB
Package / Case：
TO-220-3
Vgs(th) (Max) @ Id：
4.5V @ 250µA
Current - Continuous Drain (Id) @ 25°C：
60A (Tc)
Gate Charge (Qg) (Max) @ Vgs：
55 nC @ 10 V
Rds On (Max) @ Id, Vgs：
12mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
1970 pF @ 30 V
Power Dissipation (Max)：
3.25W (Ta), 100W (Tc)
