SUM110P04-04L-E3
MOSFET P-CH 40V 110A TO263
SUM110P04-04L-E3 Specifications
Mounting Type：
Surface Mount
Technology：
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：
40 V
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 175°C (TJ)
FET Type：
P-Channel
Supplier Device Package：
TO-263 (D2PAK)
Package / Case：
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id：
3V @ 250µA
Current - Continuous Drain (Id) @ 25°C：
110A (Tc)
Gate Charge (Qg) (Max) @ Vgs：
350 nC @ 10 V
Rds On (Max) @ Id, Vgs：
4.2mOhm @ 30A, 10V
Power Dissipation (Max)：
3.75W (Ta), 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds：
11200 pF @ 25 V
