SUM110N04-03-E3
MOSFET N-CH 40V 110A TO263
SUM110N04-03-E3 Specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：
40 V
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id：
4V @ 250µA
Supplier Device Package：
TO-263 (D2PAK)
Package / Case：
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs：
250 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C：
110A (Tc)
Rds On (Max) @ Id, Vgs：
2.8mOhm @ 30A, 10V
Power Dissipation (Max)：
3.75W (Ta), 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds：
8250 pF @ 25 V
