SUD50P10-43L-E3
MOSFET P-CH 100V 37.1A TO252
SUD50P10-43L-E3 Specifications
Mounting Type：
Surface Mount
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Drain to Source Voltage (Vdss)：
100 V
Operating Temperature：
-55°C ~ 175°C (TJ)
FET Type：
P-Channel
Package / Case：
TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package：
TO-252AA
Vgs(th) (Max) @ Id：
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：
160 nC @ 10 V
Power Dissipation (Max)：
8.3W (Ta), 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds：
4600 pF @ 50 V
Rds On (Max) @ Id, Vgs：
43mOhm @ 9.2A, 10V
Current - Continuous Drain (Id) @ 25°C：
37.1A (Tc)
