SUD50P08-26-E3
MOSFET P-CH 80V 50A TO252
SUD50P08-26-E3 Specifications
Mounting Type：
Surface Mount
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 175°C (TJ)
FET Type：
P-Channel
Package / Case：
TO-252-3, DPAK (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id：
4V @ 250µA
Supplier Device Package：
TO-252AA
Drain to Source Voltage (Vdss)：
80 V
Current - Continuous Drain (Id) @ 25°C：
50A (Tc)
Power Dissipation (Max)：
8.3W (Ta), 136W (Tc)
Gate Charge (Qg) (Max) @ Vgs：
155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds：
5160 pF @ 40 V
Rds On (Max) @ Id, Vgs：
26mOhm @ 12.9A, 10V
