STY112N65M5
MOSFET N-CH 650V 96A MAX247
STY112N65M5 Specifications
Mounting Type：
Through Hole
Operating Temperature：
150°C (TJ)
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
10V
Vgs(th) (Max) @ Id：
5V @ 250µA
Drain to Source Voltage (Vdss)：
650 V
Package / Case：
TO-247-3
Vgs (Max)：
±25V
Gate Charge (Qg) (Max) @ Vgs：
350 nC @ 10 V
Supplier Device Package：
MAX247™
Current - Continuous Drain (Id) @ 25°C：
96A (Tc)
Power Dissipation (Max)：
625W (Tc)
Rds On (Max) @ Id, Vgs：
22mOhm @ 47A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
16870 pF @ 100 V
