STB18N55M5
MOSFET N-CH 550V 16A D2PAK
STB18N55M5 Specifications
Mounting Type：
Surface Mount
Operating Temperature：
150°C (TJ)
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
10V
Gate Charge (Qg) (Max) @ Vgs：
31 nC @ 10 V
Vgs(th) (Max) @ Id：
5V @ 250µA
Supplier Device Package：
TO-263 (D2PAK)
Package / Case：
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs (Max)：
±25V
Current - Continuous Drain (Id) @ 25°C：
16A (Tc)
Power Dissipation (Max)：
110W (Tc)
Drain to Source Voltage (Vdss)：
550 V
Input Capacitance (Ciss) (Max) @ Vds：
1260 pF @ 100 V
Rds On (Max) @ Id, Vgs：
192mOhm @ 8A, 10V
