SIHP8N50D-E3
MOSFET N-CH 500V 8.7A TO220AB
SIHP8N50D-E3 Specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Supplier Device Package：
TO-220AB
Package / Case：
TO-220-3
Vgs (Max)：
±30V
Vgs(th) (Max) @ Id：
5V @ 250µA
Power Dissipation (Max)：
156W (Tc)
Gate Charge (Qg) (Max) @ Vgs：
30 nC @ 10 V
Drain to Source Voltage (Vdss)：
500 V
Rds On (Max) @ Id, Vgs：
850mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C：
8.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds：
527 pF @ 100 V
