SI6443DQ-T1-E3
MOSFET P-CH 30V 7.3A 8TSSOP
SI6443DQ-T1-E3 Specifications
Mounting Type：
Surface Mount
Package / Case：
8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package：
8-TSSOP
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 150°C (TJ)
FET Type：
P-Channel
Drain to Source Voltage (Vdss)：
30 V
Vgs(th) (Max) @ Id：
3V @ 250µA
Current - Continuous Drain (Id) @ 25°C：
7.3A (Ta)
Rds On (Max) @ Id, Vgs：
12mOhm @ 8.8A, 10V
Gate Charge (Qg) (Max) @ Vgs：
60 nC @ 5 V
Power Dissipation (Max)：
1.05W (Ta)
