SI6413DQ-T1-GE3
MOSFET P-CH 20V 7.2A 8TSSOP
SI6413DQ-T1-GE3 Specifications
Mounting Type：
Surface Mount
Package / Case：
8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package：
8-TSSOP
Technology：
MOSFET (Metal Oxide)
Operating Temperature：
-55°C ~ 150°C (TJ)
FET Type：
P-Channel
Current - Continuous Drain (Id) @ 25°C：
7.2A (Ta)
Drain to Source Voltage (Vdss)：
20 V
Vgs (Max)：
±8V
Drive Voltage (Max Rds On, Min Rds On)：
1.8V, 4.5V
Power Dissipation (Max)：
1.05W (Ta)
Vgs(th) (Max) @ Id：
800mV @ 400µA
Rds On (Max) @ Id, Vgs：
10mOhm @ 8.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs：
105 nC @ 5 V
