SI4890BDY-T1-E3
MOSFET N-CH 30V 16A 8SO
SI4890BDY-T1-E3 Specifications
Mounting Type：
Surface Mount
Supplier Device Package：
8-SOIC
Package / Case：
8-SOIC (0.154", 3.90mm Width)
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)：
30 V
Vgs (Max)：
±25V
Current - Continuous Drain (Id) @ 25°C：
16A (Tc)
Gate Charge (Qg) (Max) @ Vgs：
33 nC @ 10 V
Vgs(th) (Max) @ Id：
2.6V @ 250µA
Power Dissipation (Max)：
2.5W (Ta), 5.7W (Tc)
Rds On (Max) @ Id, Vgs：
12mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
1535 pF @ 15 V
