SI4368DY-T1-GE3
MOSFET N-CH 30V 17A 8SO
SI4368DY-T1-GE3 Specifications
Mounting Type：
Surface Mount
Supplier Device Package：
8-SOIC
Package / Case：
8-SOIC (0.154", 3.90mm Width)
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id：
1.8V @ 250µA
Drain to Source Voltage (Vdss)：
30 V
Power Dissipation (Max)：
1.6W (Ta)
Vgs (Max)：
±12V
Rds On (Max) @ Id, Vgs：
3.2mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C：
17A (Ta)
Gate Charge (Qg) (Max) @ Vgs：
80 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds：
8340 pF @ 15 V
