SI4172DY-T1-GE3
MOSFET N-CH 30V 15A 8SO
SI4172DY-T1-GE3 Specifications
Mounting Type：
Surface Mount
Supplier Device Package：
8-SOIC
Package / Case：
8-SOIC (0.154", 3.90mm Width)
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id：
2.5V @ 250µA
Drain to Source Voltage (Vdss)：
30 V
Current - Continuous Drain (Id) @ 25°C：
15A (Tc)
Gate Charge (Qg) (Max) @ Vgs：
23 nC @ 10 V
Rds On (Max) @ Id, Vgs：
12mOhm @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
820 pF @ 15 V
Power Dissipation (Max)：
2.5W (Ta), 4.5W (Tc)
