SI3433CDV-T1-GE3
MOSFET P-CH 20V 6A 6TSOP
SI3433CDV-T1-GE3 Specifications
Mounting Type：
Surface Mount
Package / Case：
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package：
6-TSOP
Technology：
MOSFET (Metal Oxide)
Operating Temperature：
-55°C ~ 150°C (TJ)
FET Type：
P-Channel
Drain to Source Voltage (Vdss)：
20 V
Vgs (Max)：
±8V
Vgs(th) (Max) @ Id：
1V @ 250µA
Drive Voltage (Max Rds On, Min Rds On)：
1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C：
6A (Tc)
Gate Charge (Qg) (Max) @ Vgs：
45 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds：
1300 pF @ 10 V
Rds On (Max) @ Id, Vgs：
38mOhm @ 5.2A, 4.5V
Power Dissipation (Max)：
1.6W (Ta), 3.3W (Tc)
