RN1115MFV,L3F
TRANS PREBIAS NPN 50V 0.1A VESM
RN1115MFV,L3F Specifications
Mounting Type：
Surface Mount
Power - Max：
150 mW
Current - Collector Cutoff (Max)：
500nA
Voltage - Collector Emitter Breakdown (Max)：
50 V
Current - Collector (Ic) (Max)：
100 mA
Vce Saturation (Max) @ Ib, Ic：
300mV @ 250µA, 5mA
Package / Case：
SOT-723
Supplier Device Package：
VESM
Transistor Type：
NPN - Pre-Biased
Frequency - Transition：
250 MHz
Resistor - Emitter Base (R2)：
10 kOhms
Resistor - Base (R1)：
2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce：
50 @ 10mA, 5V
