PSMN9R1-30YL,115
MOSFET N-CH 30V 57A LFPAK56
PSMN9R1-30YL,115 Specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)：
30 V
Vgs(th) (Max) @ Id：
2.15V @ 1mA
Supplier Device Package：
LFPAK56, Power-SO8
Package / Case：
SC-100, SOT-669
Power Dissipation (Max)：
52W (Tc)
Current - Continuous Drain (Id) @ 25°C：
57A (Tc)
Gate Charge (Qg) (Max) @ Vgs：
16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds：
894 pF @ 15 V
Rds On (Max) @ Id, Vgs：
9.1mOhm @ 15A, 10V
