PSMN5R6-100XS,127
MOSFET N-CH 100V 61.8A TO220F
PSMN5R6-100XS,127 Specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drain to Source Voltage (Vdss)：
100 V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 175°C (TJ)
Package / Case：
TO-220-3 Full Pack, Isolated Tab
Supplier Device Package：
TO-220F
Vgs(th) (Max) @ Id：
4V @ 1mA
Power Dissipation (Max)：
60W (Tc)
Gate Charge (Qg) (Max) @ Vgs：
145 nC @ 10 V
Rds On (Max) @ Id, Vgs：
5.6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C：
61.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds：
8061 pF @ 50 V
