IRL510STRLPBF
MOSFET N-CH 100V 5.6A D2PAK
IRL510STRLPBF Specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：
100 V
Vgs (Max)：
±10V
Operating Temperature：
-55°C ~ 175°C (TJ)
Supplier Device Package：
TO-263 (D2PAK)
Vgs(th) (Max) @ Id：
2V @ 250µA
Package / Case：
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Current - Continuous Drain (Id) @ 25°C：
5.6A (Tc)
Power Dissipation (Max)：
3.7W (Ta), 43W (Tc)
Drive Voltage (Max Rds On, Min Rds On)：
4V, 5V
Input Capacitance (Ciss) (Max) @ Vds：
250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs：
6.1 nC @ 5 V
Rds On (Max) @ Id, Vgs：
540mOhm @ 3.4A, 5V
